Magnetic, electric and crystallographic properties of diluted magnetic InSe(1-x)Fe(Co)x semiconductor
Identifieur interne : 001874 ( Main/Repository ); précédent : 001873; suivant : 001875Magnetic, electric and crystallographic properties of diluted magnetic InSe(1-x)Fe(Co)x semiconductor
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Abstract
The structural, magnetic and electric properties of Fe or Co doped InSe system has been studied. The X-ray diffraction patterns of the doped samples indicate the presence of InSe0.9Fe0.1 or InSe0.9Co0.1. together with a non-magnetic minor phase of In4Se3. The InSe0.9Fe0.1 system is ferromagnetic with high Curie temperature of 870 K. In contrast, the InSe0.9Co0.1 system is antiferromagnetic with different Neel temperatures. Crystallite sizes of the different phases show anisotropy along different crystallographic directions, they vary from 9 to 40 nm. The largest size is along the [00l] direction normal to the staking layers planes. The random model was applied to explain the origin of ferromagnetic properties of Fe doped sample. The non-magnetic phase In4Se3 played a major role in the high temperature ferromagnetic properties of InSe0.9Fe0.1 and the polarization of magnetic spins. The electrical conductivity increased by an order of magnitude of 2 and 1.5 in the case of Fe and Co doped samples, respectively, suggesting that the incorporation of Fe or Co creates new band configuration and hence a modification of electronic density of states of the samples studied. The anomaly in the electrical properties after doping with Fe or Co may suggest that these doped samples may be used as spintronics materials.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Magnetic, electric and crystallographic properties of diluted magnetic InSe(<sub>1-x</sub>)Fe(Co)<sub>x</sub> semiconductor</title><author><name sortKey="El Sayed, Karimat" uniqKey="El Sayed K">Karimat El-Sayed</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>X-Ray Dffraction Unit, Physics Department, Faculty of Science, Ain Shams University</s1><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>X-Ray Dffraction Unit, Physics Department, Faculty of Science, Ain Shams University</wicri:noRegion></affiliation></author><author><name sortKey="Heiba, Z K" uniqKey="Heiba Z">Z. K. Heiba</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>X-Ray Dffraction Unit, Physics Department, Faculty of Science, Ain Shams University</s1><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>X-Ray Dffraction Unit, Physics Department, Faculty of Science, Ain Shams University</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Faculty of Science, Taif University</s1><s2>888 Taif</s2><s3>SAU</s3><sZ>2 aut.</sZ></inist:fA14><country>Arabie saoudite</country><wicri:noRegion>888 Taif</wicri:noRegion></affiliation></author><author><name sortKey="Sedeek, K" uniqKey="Sedeek K">K. Sedeek</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Physics Department, Faculty of Science, Girls Branch, Al-Azhar University</s1><s3>EGY</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Physics Department, Faculty of Science, Girls Branch, Al-Azhar University</wicri:noRegion></affiliation></author><author><name sortKey="Hantour, H H" uniqKey="Hantour H">H. H. Hantour</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Physics Department, Faculty of Science, Girls Branch, Al-Azhar University</s1><s3>EGY</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Physics Department, Faculty of Science, Girls Branch, Al-Azhar University</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0261141</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0261141 INIST</idno><idno type="RBID">Pascal:12-0261141</idno><idno type="wicri:Area/Main/Corpus">001C26</idno><idno type="wicri:Area/Main/Repository">001874</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-8388</idno><title level="j" type="abbreviated">J. alloys compd.</title><title level="j" type="main">Journal of alloys and compounds</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cobalt additions</term><term>Curie point</term><term>Doping</term><term>Electrical conductivity</term><term>Ferromagnetic materials</term><term>Indium selenides</term><term>Iron additions</term><term>Magnetic hysteresis</term><term>Magnetic susceptibility</term><term>Neel temperature</term><term>Semimagnetic semiconductors</term><term>Stochastic model</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition cobalt</term><term>Susceptibilité magnétique</term><term>Addition fer</term><term>Hystérésis magnétique</term><term>Diffraction RX</term><term>Dopage</term><term>Modèle stochastique</term><term>Point Curie</term><term>Point Néel</term><term>Conductivité électrique</term><term>Séléniure d'indium</term><term>Semiconducteur semimagnétique</term><term>Matériau ferromagnétique</term><term>InSe</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The structural, magnetic and electric properties of Fe or Co doped InSe system has been studied. The X-ray diffraction patterns of the doped samples indicate the presence of InSe<sub>0.9</sub>Fe<sub>0.1</sub> or InSe<sub>0.9</sub>Co<sub>0.1</sub>. together with a non-magnetic minor phase of In<sub>4</sub>Se<sub>3</sub>. The InSe<sub>0.9</sub>Fe<sub>0.1</sub> system is ferromagnetic with high Curie temperature of 870 K. In contrast, the InSe<sub>0.9</sub>Co<sub>0.1</sub> system is antiferromagnetic with different Neel temperatures. Crystallite sizes of the different phases show anisotropy along different crystallographic directions, they vary from 9 to 40 nm. The largest size is along the [00l] direction normal to the staking layers planes. The random model was applied to explain the origin of ferromagnetic properties of Fe doped sample. The non-magnetic phase In<sub>4</sub>Se<sub>3</sub> played a major role in the high temperature ferromagnetic properties of InSe<sub>0.9</sub>Fe<sub>0.1</sub> and the polarization of magnetic spins. The electrical conductivity increased by an order of magnitude of 2 and 1.5 in the case of Fe and Co doped samples, respectively, suggesting that the incorporation of Fe or Co creates new band configuration and hence a modification of electronic density of states of the samples studied. The anomaly in the electrical properties after doping with Fe or Co may suggest that these doped samples may be used as spintronics materials.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-8388</s0></fA01><fA03 i2="1"><s0>J. alloys compd.</s0></fA03><fA05><s2>530</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Magnetic, electric and crystallographic properties of diluted magnetic InSe(<sub>1-x</sub>)Fe(Co)<sub>x</sub> semiconductor</s1></fA08><fA11 i1="01" i2="1"><s1>EL-SAYED (Karimat)</s1></fA11><fA11 i1="02" i2="1"><s1>HEIBA (Z. K.)</s1></fA11><fA11 i1="03" i2="1"><s1>SEDEEK (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>HANTOUR (H. H.)</s1></fA11><fA14 i1="01"><s1>X-Ray Dffraction Unit, Physics Department, Faculty of Science, Ain Shams University</s1><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Faculty of Science, Taif University</s1><s2>888 Taif</s2><s3>SAU</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Physics Department, Faculty of Science, Girls Branch, Al-Azhar University</s1><s3>EGY</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>102-106</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>1151</s2><s5>354000507948910180</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0261141</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of alloys and compounds</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The structural, magnetic and electric properties of Fe or Co doped InSe system has been studied. The X-ray diffraction patterns of the doped samples indicate the presence of InSe<sub>0.9</sub>Fe<sub>0.1</sub> or InSe<sub>0.9</sub>Co<sub>0.1</sub>. together with a non-magnetic minor phase of In<sub>4</sub>Se<sub>3</sub>. The InSe<sub>0.9</sub>Fe<sub>0.1</sub> system is ferromagnetic with high Curie temperature of 870 K. In contrast, the InSe<sub>0.9</sub>Co<sub>0.1</sub> system is antiferromagnetic with different Neel temperatures. Crystallite sizes of the different phases show anisotropy along different crystallographic directions, they vary from 9 to 40 nm. The largest size is along the [00l] direction normal to the staking layers planes. The random model was applied to explain the origin of ferromagnetic properties of Fe doped sample. The non-magnetic phase In<sub>4</sub>Se<sub>3</sub> played a major role in the high temperature ferromagnetic properties of InSe<sub>0.9</sub>Fe<sub>0.1</sub> and the polarization of magnetic spins. The electrical conductivity increased by an order of magnitude of 2 and 1.5 in the case of Fe and Co doped samples, respectively, suggesting that the incorporation of Fe or Co creates new band configuration and hence a modification of electronic density of states of the samples studied. The anomaly in the electrical properties after doping with Fe or Co may suggest that these doped samples may be used as spintronics materials.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70E50P</s0></fC02><fC02 i1="02" i2="3"><s0>001B70E30C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70E60E</s0></fC02><fC02 i1="04" i2="3"><s0>001B70B20F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Addition cobalt</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Cobalt additions</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Susceptibilité magnétique</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Magnetic susceptibility</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Addition fer</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Iron additions</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Hystérésis magnétique</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Magnetic hysteresis</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>XRD</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Dopage</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Doping</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Doping</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Modèle stochastique</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Stochastic model</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Modelo estocástico</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Point Curie</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Curie point</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Point Néel</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Neel temperature</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>14</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>14</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur semimagnétique</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semimagnetic semiconductors</s0><s5>17</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Matériau ferromagnétique</s0><s5>18</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Ferromagnetic materials</s0><s5>18</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InSe</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>198</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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